| PART |
Description |
Maker |
| IPP08CN10LG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
| IPP03N03LBG IPP03N03LBG08 |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
| IPP05CN10LG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
| IPB16CN10NG IPP16CN10NG10 IPI16CN10NG IPD16CN10NG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
| IPP06CN10LG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
| IPP12CN10LG IPS12CN10LG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
| IPU10N03LA Q67042-S4238 IPD10N03LA IPS10N03LA IPF1 |
OptiMOS®2 - Power packages
OptiMOS2 Power-Transistor OptiMOS2功率晶体
30 A, 25 V, 0.0104 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
|
INFINEON[Infineon Technologies AG]
|
| BSC042N03S |
XTAL CER SMT 7X5 2PAD
OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| BSO150N03 |
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 15mOhm, 9.1A, LL, dual
OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| BSB024N03LXG |
OptiMOS2 Power-MOSFET
|
Infineon Technologies AG
|
| IPU07N03LA |
OptiMOS®2 - Power packages
OptiMOS2 Power MOSFET. 25V. TO251. RDSon = 6.5mOhm. 30A. LL ？的OptiMOS功率MOSFET25V的TO251。导通状态\u003d 6.5mOhm30A条。当地雇员？
|
Infineon
Toshiba, Corp.
|
| BSR802N |
Optimos2 Small-Signal-Tansistor N-channel Avalanche rated
|
TY Semiconductor Co., L...
|
